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1

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (

Yider Wu, Qi Xiang, Jean Y.M. Yang, Gerald Lucovsky, Ming-Ren Lin

Journal:

Microelectronics Reliability

Année:

2000

Langue:

english

Fichier:

PDF, 445 KB

english, 2000

2

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

Yi-Mu Lee, Yider Wu, Gerald Lucovsky

Journal:

Microelectronics Reliability

Année:

2004

Langue:

english

Fichier:

PDF, 660 KB

english, 2004

3

Oxide formation and passivation for micro- and nano-electronic devices

Choelhwyi Bae, Gerald Lucovsky

Journal:

Applied Surface Science

Année:

2003

Langue:

english

Fichier:

PDF, 148 KB

english, 2003

4

Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices

Gerald Lucovsky

Journal:

Advanced Functional Materials

Année:

1996

Langue:

english

Fichier:

PDF, 1.33 MB

english, 1996

5

Comparisons between intrinsic bonding defects in d0 transition metal oxide such as HfO2, and impurity atom defects in d0 complex oxides such as GdScO3

Gerald Lucovsky, Kwun-Bum Chung, Leonardi Miotti, Karen Pas Bastos, Carolina Amado, Darrell Schlom

Journal:

Solid-State Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 1.53 MB

english, 2009

6

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Yi-Mu Lee, Yider Wu, Choelhwyi Bae, Joon Goo Hong, Gerald Lucovsky

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 450 KB

english, 2003

7

Low temperature semiconductor surface passivation for nanoelectronic device applications

Choelhwyi Bae, Gerald Lucovsky

Journal:

Surface Science

Année:

2003

Langue:

english

Fichier:

PDF, 289 KB

english, 2003

8

Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics

Gerald Lucovsky, Hanyang Yang, Yider Wu, Hiroake Niimi

Journal:

Thin Solid Films

Année:

2000

Langue:

english

Fichier:

PDF, 487 KB

english, 2000

9

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys

Robert S Johnson, Gerald Lucovsky, Joon Goo Hong

Journal:

Microelectronic Engineering

Année:

2001

Langue:

english

Fichier:

PDF, 176 KB

english, 2001

10

The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices

Gerald Lucovsky, James C. Phillips

Journal:

Microelectronic Engineering

Année:

1999

Langue:

english

Fichier:

PDF, 361 KB

english, 1999

11

Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces

Gerald Lucovsky, James C Phillips

Journal:

Applied Surface Science

Année:

2000

Langue:

english

Fichier:

PDF, 170 KB

english, 2000

12

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si–SiO2 interfaces

Hiro Niimi, Hanyang Yang, Gerald Lucovsky, Jeff W Keister, Jack E Rowe

Journal:

Applied Surface Science

Année:

2000

Langue:

english

Fichier:

PDF, 268 KB

english, 2000

13

A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys

Gerald Lucovsky, Jerry L. Whitten, Yu Zhang

Journal:

Applied Surface Science

Année:

2002

Langue:

english

Fichier:

PDF, 144 KB

english, 2002

14

Fixed charge and interface traps at heterovalent interfaces between Si(1 0 0) and non-crystalline Al2O3–Ta2O5 alloys

Robert S. Johnson, Gerald Lucovsky, Joon Goo Hong

Journal:

Applied Surface Science

Année:

2002

Langue:

english

Fichier:

PDF, 102 KB

english, 2002

15

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Gerald Lucovsky, Gilbert B Rayner Jr., Yu Zhang, Charles C Fulton, Robert J Nemanich, Guenther Appel, Harald Ade, Jerry L Whitten

Journal:

Applied Surface Science

Année:

2003

Langue:

english

Fichier:

PDF, 180 KB

english, 2003

16

Microscopic description of strain-reducing chemical bonding self-organizations in non-crystalline alloys

Gerald Lucovsky, James C. Phillips

Journal:

physica status solidi (a)

Année:

2009

Langue:

english

Fichier:

PDF, 266 KB

english, 2009

17

Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications

Gerald Lucovsky

Journal:

physica status solidi (a)

Année:

2009

Langue:

english

Fichier:

PDF, 368 KB

english, 2009

18

Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films

Gerald Lucovsky

Journal:

physica status solidi (a)

Année:

2010

Langue:

english

Fichier:

PDF, 154 KB

english, 2010

19

Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses

Gerald Lucovsky, James C. Phillips

Journal:

physica status solidi (b)

Année:

2009

Langue:

english

Fichier:

PDF, 769 KB

english, 2009

20

A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-xalloys

Gerald Lucovsky, James C. Phillips

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 88 KB

english, 2010

21

Dimensional constraints and percolation theory: physical mechanisms controlling electronic structure and defects in high-k transition metal oxide dielectrics

Gerald Lucovsky

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 364 KB

english, 2010

22

Analysis of the forgotten parts of the Ge K edge spectra: life before the EXAFS oscillations

Gerald Lucovsky, Joseph P. Washington, Leonardo Miotti, Michael Paesler

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 162 KB

english, 2010

23

A self-consistent model for defect states in a-Si and a-Si:H

Gerald Lucovsky, Jim Phillips

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 299 KB

english, 2007

24

Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2and Related Materials: Device Applications

Gerald Lucovsky, James C. Phillips

Journal:

Nanoscale Research Letters

Année:

2010

Langue:

english

Fichier:

PDF, 676 KB

english, 2010

25

Band edge electronic structure of transition metal/rare earth oxide dielectrics

Gerald Lucovsky

Journal:

Applied Surface Science

Année:

2006

Langue:

english

Fichier:

PDF, 1.85 MB

english, 2006

26

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

Gerald Lucovsky, Jerry L Whitten, Yu Zhang

Journal:

Microelectronic Engineering

Année:

2001

Langue:

english

Fichier:

PDF, 115 KB

english, 2001

27

Band offset energies in zirconium silicate Si alloys

Gerald Lucovsky, Bruce Rayner, Yu Zhang, Gunther Appel, Jerry Whitten

Journal:

Applied Surface Science

Année:

2003

Langue:

english

Fichier:

PDF, 169 KB

english, 2003

28

Low-temperature plasma-assisted processes for fabrication of SiO2/Si heterostructures

Gerald Lucovsky

Journal:

Advanced Functional Materials

Année:

1993

Langue:

english

Fichier:

PDF, 709 KB

english, 1993

29

A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism

Lucovsky, Gerald, Phillips, James C

Journal:

Journal of Physics Condensed Matter

Année:

2007

Langue:

english

Fichier:

PDF, 423 KB

english, 2007

30

Preface

Gerald Lucovsky

Journal:

Journal of Non-Crystalline Solids

Année:

1989

Fichier:

PDF, 24 KB

1989

31

Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain

Gerald Lucovsky, James C. Phillips

Journal:

Journal of Non-Crystalline Solids

Année:

2008

Langue:

english

Fichier:

PDF, 299 KB

english, 2008

32

Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H)

Gerald Lucovsky, Safa O. Kasap, James C. Phillips

Journal:

Journal of Non-Crystalline Solids

Année:

2008

Langue:

english

Fichier:

PDF, 142 KB

english, 2008

33

Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories

Gerald Lucovsky, James C. Phillips

Journal:

Journal of Non-Crystalline Solids

Année:

2008

Langue:

english

Fichier:

PDF, 117 KB

english, 2008

34

Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys

Gerald Lucovsky, Jim C. Phillips

Journal:

Journal of Non-Crystalline Solids

Année:

2009

Langue:

english

Fichier:

PDF, 165 KB

english, 2009

35

Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides

Gerald Lucovsky

Journal:

Journal of Non-Crystalline Solids

Année:

2002

Langue:

english

Fichier:

PDF, 249 KB

english, 2002

36

Origins of silicon solar cell passivation by SiNx:H anneal

Christoph Boehme, Gerald Lucovsky

Journal:

Journal of Non-Crystalline Solids

Année:

2002

Langue:

english

Fichier:

PDF, 112 KB

english, 2002

37

Hydrogen in amorphous silicon: local bonding and vibrational properties

Gerald Lucovsky

Journal:

Journal of Non-Crystalline Solids

Année:

1992

Langue:

english

Fichier:

PDF, 1.35 MB

english, 1992

38

Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century

Gerald Lucovsky

Journal:

Journal of Non-Crystalline Solids

Année:

1999

Langue:

english

Fichier:

PDF, 435 KB

english, 1999

39

Intermediate range order in amorphous solids

Gerald Lucovsky, Frank L. Galeener

Journal:

Journal of Non-Crystalline Solids

Année:

1980

Langue:

english

Fichier:

PDF, 322 KB

english, 1980

40

Deposition of silicon oxide, nitride and oxynitride thin films by remote plasma enhanced chemical vapor deposition

Gerald Lucovsky, David V. Tsu

Journal:

Journal of Non-Crystalline Solids

Année:

1987

Langue:

english

Fichier:

PDF, 461 KB

english, 1987

41

Work-function difference between Al and n-GaN from Al-gated n-GaNânitrided-thin-Ga[sub 2]O[sub 3]âSiO[sub 2] metal oxide semiconductor structures

Bae, Choelhwyi, Krug, Cristiano, Lucovsky, Gerald, Chakraborty, Arpan, Mishra, Umesh

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 358 KB

english, 2004

42

SPIE Proceedings [SPIE Santa Cl - DL tentative - Santa Clara, CA (Saturday 15 September 1990)] Advanced Techniques for Integrated Circuit Processing - Formation of heterostructure devices in a multichamber processing environment with in-vacuo surface analysis diagnostics and in-situ process monitoring

Lucovsky, Gerald, Kim, Sang S., Fitch, J. T., Wang, Cheng, Bondur, James A., Turner, Terry R.

Année:

1991

Langue:

english

Fichier:

PDF, 524 KB

english, 1991

43

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2

Lucovsky, Gerald

Journal:

Solid-State Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 871 KB

english, 2013

44

[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Band-Edge Electronic States, and Pre-Existing Defects in Remote Plasma Deposited (RPD) GeO2 and SiO2

Lucovsky, Gerald, Wu, Kun, Whitten, Jerry L., Papas, Brian

Année:

2012

Langue:

english

Fichier:

PDF, 372 KB

english, 2012

45

[Topics in Applied Physics] The Physics of Hydrogenated Amorphous Silicon II Volume 56 || Photoemission and optical properties

Joannopoulos, John D., Lucovsky, Gerald

Année:

1984

Langue:

english

Fichier:

PDF, 5.33 MB

english, 1984

46

Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides

Lucovsky, Gerald, Seo, Hyungtak, Lee, Sanghyun, Fleming, Leslie B., Ulrich, Marc D., Lüning, Jan, Lysaght, Pat, Bersuker, Gennadi

Journal:

Japanese Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 2.29 MB

english, 2007

47

Physical and electrical properties of noncrystalline Al[sub 2]O[sub 3] prepared by remote plasma enhanced chemical vapor deposition

Johnson, Robert S., Lucovsky, Gerald, Baumvol, Isreal

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

2001

Langue:

english

Fichier:

PDF, 556 KB

english, 2001

48

Heterointerfaces: Possibility of Intrinsic Doping

Siemons, Wolter, Koster, Gertjan, Yamamoto, Hideki, Harrison, Walter A., Lucovsky, Gerald, Geballe, Theodore H., Blank, Dave H. A., Beasley, Malcolm R.

Journal:

Physical Review Letters

Année:

2007

Langue:

english

Fichier:

PDF, 384 KB

english, 2007

49

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in ULSI CMOS

Lucovsky, Gerald, Hyungtak Seo,, Kwun-Bum Chung,, Jinwu Kim,

Année:

2009

Langue:

english

Fichier:

PDF, 789 KB

english, 2009

50

Ge doped HfO[sub 2] thin films investigated by x-ray absorption spectroscopy

Miotti, Leonardo, Bastos, Karen P., Lucovsky, Gerald, Radtke, Cláudio, Nordlund, Dennis

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

2010

Langue:

english

Fichier:

PDF, 428 KB

english, 2010